? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c 200 v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 200 v v gsm transient ? 30 v i d25 t c = 25 ? c 102 a i lrms lead current limit, rms 75 a i dm t c = 25 ? c, pulse width limited by t jm 250 a i a t c = 25 ? c5 a e as t c = 25 ? c 1.2 j dv/dt i s ? i dm , v dd ? v dss , t j ? 175c 7 v/ns p d t c = 25 ? c 750 w t j -55 ... +175 ?? c t jm 175 ?? c t stg -55 ... +175 ?? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13 / 10 nm/lb.in weight to-3p 5.5 g to-247 6.0 g trench tm power mosfets n-channel enhancement mode avalanche rated IXTQ102N20T ixth102n20t v dss = 200v i d25 = 102a r ds(on) ? ? ? ? ? 23m ? ? ? ? ? ds99821a(10/13) features ? ultra-low on resistance ? unclamped inductive switching (uis) rated ? low package inductance - easy to drive and to protect ? 175 ? c operating temperature advantages ? easy to mount ? space savings ? high power density applications ? automotive - motor drives - high side switch - 12v battery - abs systems ? dc/dc converters and off-line ups ? primary- side switch ? high current switching applications symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 200 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = ? 20v, v ds = 0v ?????????????? 200 na i dss v ds = v dss , v gs = 0v 5 ? a t j = 150 ? c 250 ??? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 18 23 m ? g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d to-3p (ixtq) d g s d (tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTQ102N20T ixth102n20t note: 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 55 92 s c iss 6800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 722 pf c rss 126 pf t d(on) 19 ns t r 26 ns t d(off) 50 ns t f 25 ns q g(on) 114 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 34 nc q gd 31 nc r thjc 0.20 ??? c/w r thch 0.25 ? c/w source-drain diode symbol test conditions characteristic values t j = 25 ? c unless otherwise specified) min. typ. max. i s v gs = 0v 102 a i sm repetitive, pulse width limited by t jm 330 a v sd i f = 50a, v gs = 0v, note 1 1.2 v t rr 130 ns i f = 50a, v gs = 0v, -di/dt = 100a/ ? s v r = 50v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2.5 ? (external) to-3p outline pins: 1 - gate 2 - drain 3 - source 4 - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ?? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 51a value vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 102a i d = 51a fig. 5. r ds(on) normalized to i d = 51a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit IXTQ102N20T ixth102n20t
ixys reserves the right to change limits, test conditions, and dimensions. IXTQ102N20T ixth102n20t fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.40.50.60.70.80.91.01.11.21.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 110 120 q g - nanocoulombs v gs - volts v ds = 100v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2013 ixys corporation, all rights reserved ixys ref: t_102n20t(7w)4-13-07-a fig. 14. resistive turn-on rise time vs. drain current 21 22 23 24 25 26 27 50 55 60 65 70 75 80 85 90 95 100 105 i d - amperes t r - nanosecond s r g = 2.5 ? v gs = 15v v ds = 100v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 22 24 26 28 30 32 34 2345678910 r g - ohms t r - nanosecond s 19 20 21 22 23 24 25 26 t d ( o n ) - nanosecond s t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 102a, 51a fig. 16. resistive turn-off switching times vs. junction temperature 18 19 20 21 22 23 24 25 26 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 35 40 45 50 55 60 65 70 75 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2.5 ? , v gs = 15v v ds = 100v i d = 51a i d = 102a fig. 13. resistive turn-on rise time vs. junction temperature 21 22 23 24 25 26 27 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 2.5 ? v gs = 15v v ds = 100v i d = 102a i d = 51a fig. 17. resistive turn-off switching times vs. drain current 18 19 20 21 22 23 24 25 26 27 28 50 55 60 65 70 75 80 85 90 95 100 105 i d - amperes t f - nanosecond s 40 43 46 49 52 55 58 61 64 67 70 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 2.5 ? , v gs = 15v v ds = 100v t j = 125oc t j = 25oc t j = 125oc t j = 25oc fig. 18. resistive turn-off switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 65 70 75 2345678910 r g - ohms t f - nanoseconds 40 50 60 70 80 90 100 110 120 130 140 150 160 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 51a, 102a IXTQ102N20T ixth102n20t
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